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| Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION DARLINGTON With TO-220 package PINNING PIN 1 2 3 Base DESCRIPTION Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 200 200 7 8 12 0.5 1.0 50 150 -55~150 ae ae UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL R|E JC PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=5A; IB=10mA IC=5A ;IB=10mA VCB=200V ;IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0.8A ; VCE=10V 1500 20 MIN 200 TYP. SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 fT 2SD1025 MAX UNIT V 1.5 2.0 0.1 0.1 5.0 30000 V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1=- IB2=10mA RL=5| ; VBB2=4V 2.0 8.0 5.0 |I |I |I s s s JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SD1025 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) JMnic |
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